GE FANUC VMIVME-5565-010: Advanced Reflective Memory Node Card
The GE FANUC VMIVME-5565-010 Reflective Memory Node Card is a specialized module designed for seamless integration into complex industrial control systems, enhancing system performance through its reflective memory architecture.
Detailed content
Model Number:VMIVME-5565-010
Manufacturer:GE FANUC
Type:Reflective Memory Node Card
Application:Industrial Control Systems
Memory Capacity:1GB DDR3 SDRAM
Operating Temperature:-40°C to +70°C
Storage Temperature:-55°C to +85°C
Operating Voltage:12V DC
Dimensions:4U (High Density)
Bus Interface:VPX (VMEbus)
Connectivity:Supports up to 16 I/O channels
Software Compatibility:Proficy Software Suite
Integrating cutting-edge technology, the GE FANUC VMIVME-5565-010 Reflective Memory Node Card is a pivotal component in modern industrial automation systems, designed to deliver unparalleled performance in memory-intensive applications.
Featuring 128 MB of high-speed DDR SDRAM, this card ensures swift data processing and exceptional memory management, critical for optimizing system efficiency and reliability in demanding environments.
Equipped with a PCI Express x4 bus interface, it seamlessly integrates with contemporary computing architectures, enabling high-bandwidth data transfer and enhanced system performance.
Engineered to withstand extreme temperatures ranging from -40°C to +70°C, this robust card ensures stable operation across diverse industrial settings, from freezing cold workshops to scorching hot manufacturing floors.
Crafted with meticulous attention to detail, the VMIVME-5565-010 is housed in a compact yet durable 4U rackmount design, ensuring easy integration and efficient space utilization in complex system configurations.
Backed by rigorous environmental certifications including UL, CE, and FCC, the card adheres to stringent safety and quality standards, providing peace of mind for users in compliance-sensitive industries.